5.5 A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply
5.5 A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply
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5.5 A 正向体偏置调谐 450MHz Gm-C 三阶低通滤波器，采用 28nm UTBB FD-SOI，在 0.7 至 1V 电源下具有 >1dBVp IIP3
DOI：
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发表时间：
2015
期刊：
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通讯作者：
Bram Nauta
中科院分区：
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作者：
J. Lechevallier;R. Struiksma;Hani Sherry;A. Cathelin;E. Klumperink;Bram Nauta
由于没有内部节点，基于反相器的Gm-C滤波器[1，2]允许实现超过opamp-RC技术可能实现的带宽。逆变器的AB类特性以及给定静态电流的高功耗特性，在最佳偏置时，可实现给定功耗的高动态范围[3]。传统的基于反相器的Gm-C滤波器的主要缺点是，它们是用电源电压VDD调谐的，因此需要精细可控的电源。用于实现这一点的电压调节器需要电压裕量（包括调谐裕量），并使总功率效率降低数十个百分点。在本文中，我们表明，通过利用体偏置在超薄埋氧层（BOX）和身体，全耗尽SOI（UTBB FD-SOI）CMOS技术，我们克服了可调VDD的要求，在基于反相器的Gm-C滤波器，同时实现高线性度在很宽的电源电压范围。
Due to the absence of internal nodes, inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible with opamp-RC techniques. The class-AB behavior of the inverter, together with the high transconductance for a given quiescent current, results in a high dynamic range for a given power consumption when optimally biased [3]. The major disadvantage of traditional inverter-based Gm-C filters is that they are tuned with the supply voltage, VDD, and hence require a finely controllable supply. Voltage regulators used to accomplish this require a voltage headroom (including margin for tuning) and degrade total power efficiency by tens of percent. In this paper, we show that by exploiting body biasing in an ultra-thin buried oxide (BOX) and body, fully-depleted SOI (UTBB FD-SOI) CMOS technology, we overcome the requirement for a tunable VDD in inverter-based Gm-C filters, while achieving high linearity over a wide supply voltage range.