Behavior of Tungsten Carbide thin Films Grown at Different Substrate Temperatures
Behavior of Tungsten Carbide thin Films Grown at Different Substrate Temperatures
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不同基底温度下生长的碳化钨薄膜的行为
DOI：
10.1109/eexpolytech56308.2022.9951001
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
D. Avasthi
中科院分区：
文献类型：
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作者：
Shristi Bist;R. Pandey;Sejal P. Shah;A. Mangababu;P. Kalita;Amita Chawla;D. Avasthi
碳化钨（WC）由于其良好的机械性能，如断裂韧性、疲劳性和抗蠕变性，具有多种用途。由于其优异的硬度（20.4 GPa），高熔化温度（> 3000k），出色的热稳定性和抗氧化特性，它是一种经过充分研究的材料，广泛应用于切削工具和高磨损部件。它也可能是一种很有前途的用于托卡马克反应堆等离子体面壁涂层的材料。本工作的目的是合成和表征不同晶粒尺寸的薄膜，用于随后在托卡马克中应用的辐射损伤研究。采用射频磁控溅射技术在不同衬底温度下在硅衬底上生长薄膜。卢瑟福后向散射（RBS）测定了原始膜的化学计量和厚度。对薄膜进行了掠角x射线衍射（GAXRD）和拉曼光谱分析。GAXRD结果表明，在不同的衬底温度下，薄膜的晶粒尺寸变化不大。此外，在988 K室温下退火沉积的样品导致晶粒尺寸增大。
Tungsten carbide (WC) has various applications due to its good mechanical properties, such as fracture toughness, fatigue, and creep resistance. Due to its exceptional hardness (20.4 GPa), high melting temperature (>3000 K), outstanding thermal stability, and anti-oxidation qualities, it is a well-studied material and is widely employed in cutting tools, and high-wear components. It could also be a promising material for coating on plasma facing wall in Tokamak reactor. The aim of present work was to synthesize and characterize thin films of varying grain size for subsequent radiation damage studies for application in Tokamak. The films were grown on Si substrate at different substrate temperatures using radio frequency (RF) magnetron sputtering. Rutherford Backscattering (RBS) was performed to determine the stoichiometry and thickness of the pristine films. Glancing angle X-ray diffraction (GAXRD) and Raman spectroscopy of the films were also performed. GAXRD of the thin films revealed that there is insignificant variation in the grain size for films deposited at different substrate temperatures. Further, annealing the sample deposited at room temperature at 988 K resulted in increased grain size.