30-W/mm GaNHEMTs by field plate optimization
30-W/mm GaNHEMTs by field plate optimization
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DOI：
10.1109/led.2003.822667
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发表时间：
2004-03-01
影响因子：
4.9
通讯作者：
Parikh, P
中科院分区：
文献类型：
--
作者：
Wu, YF;Saxler, A;Parikh, P
为了获得最佳性能，采用不同尺寸的场板制作了SiC基GaN高电子迁移率晶体管（HEMT）。射频（RF）电流-电压摆幅的极大增强，实现了可接受的妥协，在增益，通过在捕获效应的减少和击穿电压的增加。当偏压为120 V时，使用尺寸为0.55 × 246 μ m（2）和场板长度为1.1 μ m的器件在4 GHz获得了32.2 W/mm的连续波输出功率密度和54.8%的功率附加效率（PAE）。具有0.9 μ m的较短场板的器件在8 GHz下也产生30.6 W/mm，具有49.6%PAE。这样的半导体功率密度比常规栅极GaN基HEMT获得的10-12 W/mm的值有了显著的提高。
GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance. Great enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages. When biased at 120 V, a continuous wave output power density of 32.2 W/mm and power-added efficiency (PAE) of 54.8% at 4 GHz were obtained using devices with dimensions of 0.55 x 246 mum(2) and a field-plate length of 1.1 mum. Devices with a shorter field plate of 0.9 mum also generated 30.6 W/mm with 49.6% PAE at 8 GHz. Such ultrahigh power densities are a dramatic improvement over the 10-12 W/mm values attained by conventional gate GaN-based HEMTs.