Interplay between hybridization gaps and unusual magnetic orders in Kondo semiconductors CeT2Al10 (T = Ru and Os)
Interplay between hybridization gaps and unusual magnetic orders in Kondo semiconductors CeT2Al10 (T = Ru and Os)
复制标题
近藤半导体 CeT2Al10 中杂化能隙与异常磁序之间的相互作用（T = Ru 和 Os）
DOI：
10.1080/14786435.2019.1646438
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
D. T. Adroja
中科院分区：
文献类型：
--
作者：
T. Takabatake;Y. Muro;J. Kawabata;K. Hayashi;T. Takeuchi;K. Umeo;T. Ekino;D. T. Adroja
基于稀土元素的近藤半导体在费米能级附近的重整化态密度方面具有很窄的差距。由于 4f 态与导带的强烈杂化，它们的基态保持非磁性。然而，在斜方化合物CeT2Al10(T= Ru, Os)中，在相当高的温度TN≅ 28 K下，杂化能隙打开后会出现反铁磁(AFM)有序。我们对电子/空穴掺杂对磁性和输运性质、电子隧道和自旋能隙形成的影响的系统研究表明，杂化能隙对于不寻常的AFM有序是必不可少的。在单轴压力下，TN随着正交b轴参数的减小而线性增加。我们的研究结果支持这样的模型：在存在杂化间隙的情况下，一种沿轴发展的电荷密度波会在这些系统中诱导 AFM 级数。
Kondo semiconductors based on rare-earth elements possess a narrow gap in the renormalised density of states near the Fermi level. Their ground states remain nonmagnetic due to strong hybridisation of the 4fstate with conduction bands. However, in the orthorhombic compounds CeT2Al10(T= Ru, Os), opening of a hybridisation gap is followed by an antiferromagnetic (AFM) order at a rather high temperatureTN≅ 28 K. Our systematic studies of the effects of electron/hole doping on the magnetic and transport properties, electron tunnelling, and spin-gap formation revealed that the hybridisation gap is indispensable for the unusual AFM order. Under uniaxial pressure,TNincreases linearly as the orthorhombicb-axis parameter is decreased. Our findings support the model that a kind of charge-density wave developing along thebaxis in the presence of the hybridisation gap induces the AFM order in these systems.