Possible pressure-induced topological quantum phase transition in the nodal line semimetal ZrSiS
Possible pressure-induced topological quantum phase transition in the nodal line semimetal ZrSiS
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DOI：
10.1103/physrevb.99.085204
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发表时间：
2019-01
影响因子：
3.7
通讯作者：
D. VanGennep;T. Paul;C. Yerger;S. Weir;Y. Vohra;J. Hamlin
中科院分区：
文献类型：
--
作者：
D. VanGennep;T. Paul;C. Yerger;S. Weir;Y. Vohra;J. Hamlin
ZrSiS最近由于其不寻常的电子特性而受到关注：近乎完美的电子空穴补偿，大的各向异性磁阻，费米能级附近的多个狄拉克节点，以及高达2 eV的极大范围的线性色散。我们对ZrSiS单晶进行了一系列高压电阻率测量。Shubnikov-de哈斯测量显示两个不同的振荡频率。对于较小的轨道，我们观察到0.5的相位变化，发生在0.16 - 0.5 GPa之间。这种相变伴随着费米面横截面积的突然减小。我们把这种相位变化归因于一种可能的拓扑量子相变。较大轨道的相位呈现出π的Berry相位，并且在2.3 GPa以下保持大致恒定。对更高压力的电阻率测量表明，压力诱导超导性至少为20 GPa。
ZrSiS has recently gained attention due to its unusual electronic properties: nearly perfect electron-hole compensation, large, anisotropic magneto-resistance, multiple Dirac nodes near the Fermi level, and an extremely large range of linear dispersion of up to 2 eV. We have carried out a series of high pressure electrical resistivity measurements on single crystals of ZrSiS. Shubnikov-de Haas measurements show two distinct oscillation frequencies. For the smaller orbit, we observe a change in the phase of 0.5, which occurs between 0.16 - 0.5 GPa. This change in phase is accompanied by an abrupt decrease of the cross-sectional area of this Fermi surface. We attribute this change in phase to a possible topological quantum phase transition. The phase of the larger orbit exhibits a Berry phase of pi and remains roughly constant up to 2.3 GPa. Resistivity measurements to higher pressures show no evidence for pressure-induced superconductivity to at least 20 GPa.