Impact of Soft Annealing on the Performance of Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors
Impact of Soft Annealing on the Performance of Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors
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DOI：
10.1021/am303235z
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发表时间：
2013-05-08
影响因子：
9.5
通讯作者：
Alshareef, H. N.
中科院分区：
文献类型：
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作者：
Nayak, Pradipta K.;Hedhili, Mohamed N.;Alshareef, H. N.
结果表明，软退火时间对溶液法非晶锌锡氧化物薄膜晶体管的性能有很大影响。发现延长软退火时间会引起器件的两个重要变化：(i)锌锡氧化膜厚度的减少，（ii）氧空位浓度的增加。与经过软退火的有源沟道层（氧化锌锡）相比，未经软退火制备的器件表现出较差的晶体管性能。在采用10分钟软退火锌锡氧化物薄膜作为通道层的情况下，实现了最高的饱和场效应迁移率-5.6 cm(2) v - 1s(-1)，漏源通断电流比（I-on/I-off）为2 × 10(8)。这项工作的发现确定了软退火是化学衍生薄膜晶体管加工的关键参数，它将器件性能与软退火引起的材料结构变化联系起来。
It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility-5.6 cm(2) V-1 s(-1) with a drain-to-source on off current ratio (I-on/I-off) of 2 x 10(8)-was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing.