Sensitive monitoring of photocarrier densities in the active layer of a photovoltaic device with time-resolved terahertz reflection spectroscopy
Sensitive monitoring of photocarrier densities in the active layer of a photovoltaic device with time-resolved terahertz reflection spectroscopy
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DOI：
10.1063/1.4975631
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发表时间：
2017-02
影响因子：
4
通讯作者：
G. Yamashita;E. Matsubara;M. Nagai;Changsu Kim;H. Akiyama;Y. Kanemitsu;M. Ashida
中科院分区：
文献类型：
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作者：
G. Yamashita;E. Matsubara;M. Nagai;Changsu Kim;H. Akiyama;Y. Kanemitsu;M. Ashida
我们证明了灵敏的测量中的GaAs基光伏器件的有源层的光生载流子，使用时间分辨太赫兹反射光谱。我们发现，法布里-珀罗干涉引起的反射凹陷强烈地受到p-i-n结构有源层中载流子分布的影响。实验结果表明，该方法适用于定量评价太阳电池工作条件下有源层载流子动力学行为。
We demonstrate the sensitive measurement of photocarriers in an active layer of a GaAs-based photovoltaic device using time-resolved terahertz reflection spectroscopy. We found that the reflection dip caused by Fabry-Perot interference is strongly affected by the carrier profile in the active layer of the p-i-n structure. The experimental results show that this method is suitable for quantitative evaluation of carrier dynamics in active layers of solar cells under operating conditions.