Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates
Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates
复制标题
3-MeV 质子对 4H-SiC 双极器件和集成或非门的影响
DOI：
--
复制
发表时间：
2013
影响因子：
1.8
通讯作者：
A. Hallén
中科院分区：
文献类型：
--
作者：
S. Suvanam;L. Lanni;B. G. Malm;C. Zetterling;A. Hallén
研究了3 MeV质子对4H-SIC双极型器件和集成OR-NOR门的辐射效应。从1×10<sup>8</sup>cm<sup>-2</sup>照射剂量至1×10<sup>13</sup>cm<sup>-2</sup>。直到注量为1×10<sup>11</sup>cm<sup>-2</sup>时，双极器件和逻辑门都是稳定的，但对于较高的注量，它们开始随着辐照注量的增加而退化。利用TCAD模拟发现，晶体管电流增益的退化更多地是由表面态决定的，而不是由质子辐照产生的体缺陷。用SPICE对逻辑电路的模拟表明，当注量为1×10<sup>12</sup>cm<sup>-2</sup>及以上时，增益劣化是导致电路性能不稳定的主要原因。
Radiation effects of 3-MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gates have been investigated. The chips were irradiated from a fluence of 1× 10<sup>8</sup> cm<sup>-2</sup> until 1 × 10<sup>13</sup> cm<sup>-2</sup>. Up until a fluence of 1 × 10<sup>11</sup> cm<sup>-2</sup>, both the bipolar devices and the logic gates were found to be stable, but for higher fluence, they begin to degrade as a function of irradiation fluence. Using TCAD simulations, degradation of the transistor current gain has been found to be more dominated by surface states than bulk defects generated by the proton irradiation. Simulations of logic circuits using SPICE show that the gain degradation is the key contribution to the unstable performance of the circuits from the fluence of 1 × 10<sup>12</sup> cm<sup>-2</sup> and above.