Near-infrared luminescence of erbium doped Ga2O3 films and devices based on silicon: Realization of energy transfer
Near-infrared luminescence of erbium doped Ga2O3 films and devices based on silicon: Realization of energy transfer
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DOI：
10.1016/j.optmat.2022.112462
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发表时间：
2022-07
影响因子：
3.9
通讯作者：
H. Pang;Majun He;Jie Hu;Yuxuan Fan;Huabao Shang;Dongsheng Li;Deren Yang
中科院分区：
文献类型：
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作者：
H. Pang;Majun He;Jie Hu;Yuxuan Fan;Huabao Shang;Dongsheng Li;Deren Yang
用溅射方法在硅衬底和相应的器件上制备了掺Er的Ga2O3光致发光和电致发光，分别获得了1.54Mμm的光致发光和电致发光。利用光泵浦光抽运实现了Ga2O3与Er2+之间的高效能量转移，能量转移效率为54.9%。与传统的超热电子碰撞激发不同，本文证明了Er离子的∼1.54μm电致发光是由间接激发产生的。其中，发光器件的开启电压为∼13V，起始电场为1.4mV/cm。这项工作展示了用掺Er的Ga2O3薄膜制备实用的电驱动硅基光源的潜力。
1.54 μm photoluminescence and electroluminescence are achieved from erbium doped Ga2O3films on silicon substrates and corresponding devices fabricated by sputtering, respectively. Efficient energy transfer between Ga2O3and erbium ions is realized in optical pumping, with the energy transfer efficiency of 54.9%. The ∼1.54 μm electroluminescence of erbium ions here is proved to originate from indirect excitation, different from the conventional impact excitation by hot electrons. Herein, the light emitting devices present a turn-on voltage of ∼13 V and onset electric field of 1.4 MV/cm. This work demonstrates the potential of preparing practical electrical-driven silicon-based light sources from erbium doped Ga2O3films.