Static and dynamic simulation studies on the AlGaN/GaN pressure sensor
Static and dynamic simulation studies on the AlGaN/GaN pressure sensor
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DOI：
10.1088/1361-6641/ab478a
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发表时间：
2019-09
影响因子：
1.9
通讯作者：
Ashu Wang;Lingyan Zeng;Wen Wang;Zhen Luo
中科院分区：
文献类型：
--
作者：
Ashu Wang;Lingyan Zeng;Wen Wang;Zhen Luo
本文采用电-热-力耦合的静态和动态有限元模拟方法对AlGaN/GaN压力传感器进行了研究。传感器的灵敏度表示为集成在AlGaN/GaN悬臂梁或圆形膜片上的晶体管的漏电流随外加压力的变化，即压阻效应，其本质是由压电极化电荷的变化引起的。在静态模拟研究中，分别说明了晶体管自热、栅金属层、AlGaN类施主表面态和GaN中类体受主陷阱对灵敏度的影响。在动态模拟研究中，分析了具有体受主陷阱的传感器的瞬态特性，以及圆形膜片的固有频率与自热以及晶体管集成在膜片上的位置的关系。该工作为AlGaN/GaN压力传感器的设计和优化提供了有益的指导。
In this paper, electro-thermo-mechanical coupled static and dynamic FEM simulations are adopted to study the AlGaN/GaN pressure sensor. The sensor sensitivity is expressed as the drain current change of transistor integrated on the AlGaN/GaN cantilever or circular diaphragm with the applied pressure, namely piezoresistive effect, which is caused essentially by the change of piezoelectric polarization charge. In the static simulation study, how the transistor self-heating, gate metal layer, AlGaN donor-like surface states, and bulk acceptor-like traps in GaN influence the sensitivity are separately illustrated. In the dynamic simulation study, transient behavior of the sensor with the bulk acceptor-like traps and dependences of the natural frequency of circular diaphragm on the self-heating as well as the position of transistor integrated on the diaphragm are analyzed. This work would provide useful guidelines for the design and optimization of AlGaN/GaN pressure sensor.