A Neutron Activation Analysis Study of the Sources of Transition Group Metal Contamination in the Silicon Device Manufacturing Process
A Neutron Activation Analysis Study of the Sources of Transition Group Metal Contamination in the Silicon Device Manufacturing Process
复制标题
硅器件制造过程中过渡族金属污染来源的中子活化分析研究
DOI：
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发表时间：
1981
期刊：
影响因子：
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通讯作者：
C. W. Pearce
中科院分区：
文献类型：
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作者：
P. F. Schmidt;C. W. Pearce
在器件制造过程中，对初始硅衬底上的过渡族金属的来源、种类和数量进行了调查。调查从用于硅锭制造的多晶硅原料开始，延伸到所有常规设备制造步骤，如晶圆、抛光、氧化、外延、离子注入等。如果制造过程的所有其他步骤都在完全控制之下，那么在没有蒸汽氧化等情况下的高温炉操作目前是主要的污染源。然而，在离子注入中，受污染的抛光浆、受污染的处理工具或载体、不纯净的船或接收器，或选择不合适的材料用于光束捕获板等，也会导致麻烦。有几种选择可以避免在高温处理期间引入的污染，并对这些进行了审查。
A survey is given of the sources, species, and quantities of transition group metals residing on starting silicon substrates and introduced during the device manufacturing process. The survey begins with the polysilicon feed for silicon ingot fabrication and extends through all customary device fabrication steps, such as wafering, polishing, oxidations, epitaxy, ion implantation, etc. High temperature furnace operations in the absence of , such as steam oxidations, are presently the major source of contamination if all other steps of the fabrication process are under full control. However, contaminated polishing slurries, contaminated handling tools or carriers, impure boats or susceptors, or choice of unsuitable materials for beam catcher plates, etc. in ion implantation, can also lead to trouble. Several options are available to avoid the contamination introduced during high temperature treatments, and these are reviewed.