Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction.
Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction.
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DOI：
10.1021/acs.nanolett.8b04160
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发表时间：
2018-07
期刊：
影响因子：
10.8
通讯作者：
Tiancheng Song;M. Tu;Caitlin Carnahan;Xinghan Cai;T. Taniguchi;Kenji Watanabe;M. McGuire;D. Cobden;Di Xiao;W. Yao;Xiaodong Xu
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文献类型：
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作者：
Tiancheng Song;M. Tu;Caitlin Carnahan;Xinghan Cai;T. Taniguchi;Kenji Watanabe;M. McGuire;D. Cobden;Di Xiao;W. Yao;Xiaodong Xu
原子薄三碘化铬(CrI3)是一种层状反铁磁绝缘体，其相邻的铁磁单分子层是反铁磁耦合的。这种不同寻常的磁性结构自然包括一系列对准的自旋滤光器，它们可以用来制作具有非常大的隧道磁阻(TMR)的自旋滤光器磁隧道结。在这里，我们报道了在双栅结构中由单层石墨烯接触夹住四层CrI3形成的TMR的电压控制。通过改变固定磁场下的栅极电压，器件可以在净磁化强度相同但电阻截然不同的双稳磁态之间进行可逆切换(切换倍数为10倍或更多)。此外，在不切换状态的情况下，由于自旋相关的隧道势垒和石墨烯接触中不断变化的载流子分布，TMR可以在17,000%到57,000%之间连续调制。我们的工作展示了新型磁控晶体管的作用，并为电压控制范德华自旋电子器件打开了可能性。
Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of antialigned spin filters, which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of 10 or more). In addition, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work demonstrates new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.