Stability and heating rate dependent metal-insulator transition properties of VO2 film grown by MBE
Stability and heating rate dependent metal-insulator transition properties of VO2 film grown by MBE
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MBE 生长的 VO2 薄膜的稳定性和加热速率依赖的金属-绝缘体转变特性
DOI：
10.1007/s10854-017-7603-1
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Luo Yingmin
中科院分区：
文献类型：
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作者：
Sun Hongjun;Zhang Bingye;Bian Jiming;Wang Minhuan;Zhang Dong;Miao Lihua;Luo Yingmin
采用分子束外延技术在蓝宝石衬底上生长了不同厚度的高质量VO 2薄膜。X射线衍射和原子力显微镜测试结果表明，制备的VO 2薄膜具有致密、表面光滑、无裂纹等特点。通过调节VO 2薄膜的厚度，可以显著改善VO 2薄膜的结晶质量和表面形貌。研究了该材料的稳定性和升温速率对金属-绝缘体相变的影响。VO 2薄膜的转变温度降低和稳定性退化主要是由于暴露在空气中引起的表面降解以及衬底与VO 2薄膜之间的相互扩散所致。
High quality VO2films with various thicknesses were grown on sapphire substrate by molecular beam epitaxy. X-ray diffraction and atomic force microscopy measurements indicated that high quality single phase VO2films with dense and smooth surface as well as free of cracks were achieved. Via adjusting the thickness of VO2films, the crystalline quality and the surface morphology of VO2films are significantly improved. The stability and heating rate dependent metal–insulator transition property were investigated. The decreasing of transition temperature and the degeneracy of the stability of VO2is mainly due to the surface degradation from air exposure and the interdiffusion between the substrate and VO2film.