Alkyl chain length dependent mobility of organic field-effect transistors based on thienyl-furan oligomers determined by the transfer line method

Alkyl chain length dependent mobility of organic field-effect transistors based on thienyl-furan oligomers determined by the transfer line method
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DOI:
10.1063/1.2179107
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发表时间:
2006-02
影响因子:
4
通讯作者:
T. Minari;Y. Miyata;M. Terayama;T. Nemoto;T. Nishinaga;K. Komatsu;S. Isoda
T. Minari;Y. Miyata;M. Terayama;T. Nemoto;T. Nishinaga;K. Komatsu;S. Isoda
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
T. Minari;Y. Miyata;M. Terayama;T. Nemoto;T. Nishinaga;K. Komatsu;S. Isoda

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有机场效应晶体管是由噻吩和呋喃交替连接组成的低聚物以及分子两端具有烷基取代基的低聚物制成的。迁移率由传输线法确定,以纠正源/漏寄生电阻的影响。由5个杂环组成,末端环上有己基的噻吩呋喃低聚物迁移率为0.042cm²∕Vs。低聚物的迁移率很大程度上取决于π共轭链和两端烷基链取代基的长度,这是由于真空沉积膜的特殊结构和形态特性所决定的。
Organic field-effect transistors are fabricated using oligomers composed of alternating connected thiophene and furan, and those having alkyl substituents at both ends of the molecules. The mobilities are determined by the transfer line method to correct for the effect of source/drain parasitic resistance. A mobility of 0.042cm2∕Vs is achieved for a thienyl-furan oligomer composed of five heterocycles and having hexyl groups at the terminal rings. The mobility of the oligomers strongly depends on the length of the π-conjugated chain and the alkyl chain substituent at both ends, attributable to the specific structural and morphological properties of the vacuum-deposited films.