High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer
High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer
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DOI：
10.1002/pssa.201000055
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发表时间：
2010-09
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通讯作者：
P. Volpe;P. Muret;J. Pernot;F. Omnès;T. Teraji;F. Jomard;D. Planson;P. Brosselard;N. Dheilly;B. Vergne;Sigo Scharnholtz
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作者：
P. Volpe;P. Muret;J. Pernot;F. Omnès;T. Teraji;F. Jomard;D. Planson;P. Brosselard;N. Dheilly;B. Vergne;Sigo Scharnholtz
金刚石是一种非常有前途的电力电子和电能管理装置材料。过去已经实现了几种结构，用于在掺硼微波等离子体增强化学气相沉积(MPCVD)层和低掺硼和高掺硼堆积结构上制备肖特基二极管。与此同时，性能往往受到一些限制，主要是由于涂层的结晶质量不足或钻石/金属界面没有优化。在这项研究中，我们将特别指出，获得高击穿反向电压和高击穿电场的钻石肖特基二极管需要经过几个因素的优化：净受主浓度低于1016 cm−3，外延层生长条件，有效的表面钝化技术的实施和金属/金刚石界面的完整性。通过对上述条件的优化，我们制作了横向金肖特基二极管，在7-9.5 mV/cm的电场诱导的雪崩击穿之前，反向电压最高可达7.5kV。这些发现为在高功率电子设备中工作的单极钻石器件开辟了道路，而不像其他宽带隙半导体那样使用保护环或边缘终端。
Diamond is a very promising material for power electronics and electrical energy management devices. Several architectures have been implemented in the past for the fabrication of Schottky diodes on boron doped microwave plasma enhanced chemical vapour deposition (MPCVD) layers and on lowly and highly boron doped stacked structures. Meanwhile, the performances often suffered several limitations, mainly due to insufficient crystalline quality of the layers or a non‐optimized diamond/metal interface. In this study, we will especially show that the achievement of diamond Schottky diode with high breakdown reverse voltage and high breakdown field goes through the optimization of several factors: a net acceptor concentration below 1016 cm−3, the epilayer growth conditions, the implementation of efficient surface passivation techniques and the integrity of the metal/diamond interface. Optimizing the previous conditions enabled us to fabricate a lateral gold Schottky diodes withdrawing reverse voltages up to 7.5 kV before avalanche breakdown induced by an electric field in the range 7–9.5 MV/cm. These findings open the route for unipolar diamond devices operating in high power electronics without the use of guard rings or edge terminations contrary to other wide band gap semiconductors.