Plasmonically-enhanced mid-infrared photoluminescence in a metal/narrow-gap semiconductor structure
Plasmonically-enhanced mid-infrared photoluminescence in a metal/narrow-gap semiconductor structure
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DOI：
10.1209/0295-5075/114/37005
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发表时间：
2016-05
期刊：
影响因子：
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通讯作者：
Pengqi Lu;C. Cai;Bingpo Zhang;Bozhi Liu;Huizhen Wu;G. Bi;J. Si
中科院分区：
文献类型：
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作者：
Pengqi Lu;C. Cai;Bingpo Zhang;Bozhi Liu;Huizhen Wu;G. Bi;J. Si
我们报道了通过表面等离子激元与窄禁带半导体中激子的耦合，在纳米尺度的金属/半导体结构中增强中红外（MIR）发光强度。金属/半导体界面处的全内反射光子有效地激发SPP。由SPP诱导的强电场反过来极大地改变了由泵浦激光产生的激子的辐射复合速率，从而极大地改变了MIR发光强度。这一发现有助于理解窄禁带半导体中SPs的基础科学和新型MIR器件的开发。
We report the enhancement of the mid-infrared (MIR) luminescence intensity in a nanoscale metal/semiconductor structure by the coupling of surface plasmon polaritons (SPPs) with excitons in a narrow-gap semiconductor. The SPPs are efficiently excited by the total internal reflection photons at a metal/semiconductor interface. The intense electric field induced by SPPs, in turn, greatly changes the radiative recombination rates of the excitons generated by the pumping laser and thus the MIR luminescence intensity. The finding avails the understanding of fundamental science of SPs in narrow-gap semiconductors and the development of novel MIR devices.