In Situ Growth of All-Inorganic Perovskite Single Crystal Arrays on Electron Transport Layer
In Situ Growth of All-Inorganic Perovskite Single Crystal Arrays on Electron Transport Layer
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电子传输层上全无机钙钛矿单晶阵列的原位生长
DOI：
10.1002/advs.201902767
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发表时间：
2020
期刊：
影响因子：
15.1
通讯作者：
Kai Wang
中科院分区：
文献类型：
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作者：
Xiaobing Tang;Wei Chen;Dan Wu;Aijing Gao;Gaomin Li;Jiayun Sun;Kangyuan Yi;Zhaojin Wang;Guotao Pang;Hongcheng Yang;Renjun Guo;Haochen Liu;Huaying Zhong;Mingyuan Huang;Rui Chen;Peter Müller-Buschbaum;Xiao Wei Sun;Kai Wang
在载流子输运层上直接生长钙钛矿单晶将为新兴光电器件的发展开辟一条光明的道路。本文报道了在立方氧化锌（c-ZnO）上原位生长高质量的全无机钙钛矿（CsPbBr3）单晶阵列（PeSCAs），并将其用作光电器件中的无机电子传输层。PeSCAs由长6-10 μ m、宽2-3 μ m的矩形薄微血小板组成。通过（100）（CsPbBr3）平行于（100）（c-ZnO）的外延晶格相干性，沉积的c-ZnO能够形成相纯和高结晶的立方钙钛矿，掠入射广角x射线散射进一步证实了这一点。PeSCAs具有26天的结构稳定性和9天的光致发光稳定性，明显优于钙钛矿纳米晶体（pens）。PeSCAs的高结晶度允许较低的陷阱态密度、较长的载流子寿命和较窄的激子能量无序，从而导致比pce更快的扩散速率。这些结果揭示了建立c-ZnO非均相层界面的可能性，这是实现钙钛矿与载流子输运层更好集成的重要一步。
Directly growing perovskite single crystals on charge carrier transport layers will unravel a promising route for the development of emerging optoelectronic devices. Herein, in situ growth of high-quality all-inorganic perovskite (CsPbBr3) single crystal arrays (PeSCAs) on cubic zinc oxide (c-ZnO) is reported, which is used as an inorganic electron transport layer in optoelectronic devices, via a facile spin-coating method. The PeSCAs consist of rectangular thin microplatelets of 6-10 mu m in length and 2-3 mu m in width. The deposited c-ZnO enables the formation of phase-pure and highly crystallized cubic perovskites via an epitaxial lattice coherence of (100)(CsPbBr3)parallel to(100)(c-ZnO), which is further confirmed by grazing incidence wide-angle X-ray scattering. The PeSCAs demonstrate a significant structural stability of 26 days with a 9 days excellent photoluminescence stability in ambient environment, which is much superior to the perovskite nanocrystals (PeNCs). The high crystallinity of the PeSCAs allows for a lower density of trap states, longer carrier lifetimes, and narrower energetic disorder for excitons, which leads to a faster diffusion rate than PeNCs. These results unravel the possibility of creating the interface toward c-ZnO heterogeneous layer, which is a major step for the realization of a better integration of perovskites and charge carrier transport layers.