Reliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET
Reliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET
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对基于商用 AlGaN/GaN 的 FET 进行伽马射线和 X 射线 TID 效应的可靠性分析
DOI：
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发表时间：
2021
影响因子：
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通讯作者：
M. Guazzelli
中科院分区：
文献类型：
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作者：
A. C. Vilas Bôas;Saulo Gabriel Alberton;Nilberto H. Medina;Vitor Ângelo Paulino;Marco Antonio Assis Melo;Roberto Baginski Santos;R. Giacomini;T. Cavalcante;Rafael Galhardo Vaz;E. Junior;L. Seixas;S. Finco;M. Guazzelli
在这项工作中，测量了GaN HEMT对TID的鲁棒性。这些结果将与以前的X射线为基础的工作进行比较。通过IxV曲线和辐照器械的特征参数研究了稳健性。分析包括从开和关状态模式获得的数据。这项工作的结论是，该设备是稳健的TID，因为它迅速恢复重要参数。主要是开态模式，它比关态模式表现更好。对于X射线观察到类似的行为。最后，在该装置中，由TID引起的Δ VTH值与剂量率和辐射源无关。
In this work, measurements were taken to investigate the robustness of a GaN HEMT to TID by a 60CO Source. These results will be compared with a previous X-ray based work. The robustness was investigated through IxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on- and off- state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Mainly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the VTH values due to the TID, in this device is independent of the dose rate and the radiation source.