Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor.
Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor.
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DOI：
10.1038/nmat2385
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发表时间：
2009-03
期刊：
影响因子：
41.2
通讯作者：
X. J. Wang;I. Buyanova;F. Zhao;D. Lagarde;A. Balocchi;X. Marie;C. Tu;J. Harmand;W. M. Chen
中科院分区：
文献类型：
--
作者：
X. J. Wang;I. Buyanova;F. Zhao;D. Lagarde;A. Balocchi;X. Marie;C. Tu;J. Harmand;W. M. Chen
在室温下生成、操纵和检测电子自旋极化和相干性是未来自旋电子学和基于自旋的量子信息技术的核心。自旋过滤是自旋电子应用的关键问题，已通过铁磁金属、稀磁半导体、量子点接触、量子点、碳纳米管、多铁性材料等得到证明。迄今为止，这种过滤效果仅限于有限的效率，并且主要是在低温或磁场下。在这里，我们提供了直接且明确的实验证明，证明电子自旋极化缺陷（例如稀氮化物GaN中的盖自间隙原子）可以有效地耗尽具有相反自旋方向的传导电子，从而可以将非磁性半导体转变为在室温和零磁场下工作的高效自旋滤波器。这项工作展示了这种缺陷设计的可切换自旋过滤器作为一种有吸引力的替代品的潜力，可以在室温下生成、放大和检测电子自旋极化，而无需磁性材料或外部磁场。
Generating, manipulating and detecting electron spin polarization and coherence at room temperature is at the heart of future spintronics and spin-based quantum information technology,,,. Spin filtering, which is a key issue for spintronic applications, has been demonstrated by using ferromagnetic metals,,,, diluted magnetic semiconductors,, quantum point contacts, quantum dots, carbon nanotubes, multiferroics and so on. This filtering effect was so far restricted to a limited efficiency and primarily at low temperatures or under a magnetic field. Here, we provide direct and unambiguous experimental proof that an electron-spin-polarized defect, such as a Gaiself-interstitial in dilute nitride GaNAs, can effectively deplete conduction electrons with an opposite spin orientation and can thus turn the non-magnetic semiconductor into an efficient spin filter operating at room temperature and zero magnetic field. This work shows the potential of such defect-engineered, switchable spin filters as an attractive alternative to generate, amplify and detect electron spin polarization at room temperature without a magnetic material or external magnetic fields.