Heteroepitaxial Growth of CdF2 Layers on CaF2/Si(111) by Molecular Beam Epitaxy
Heteroepitaxial Growth of CdF2 Layers on CaF2/Si(111) by Molecular Beam Epitaxy
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分子束外延在 CaF2/Si(111) 上异质外延生长 CdF2 层
DOI：
10.1143/jjap.37.295
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发表时间：
1998
影响因子：
1.5
通讯作者：
N. Sokolov
中科院分区：
文献类型：
--
作者：
A. Izumi;K. Tsutsui;N. Sokolov
利用X射线双晶衍射（XRD）研究了CaF 2/Si（111）衬底上分子束外延（MBE）生长的CdF 2薄膜的结晶度与生长温度和CaF 2缓冲层结构完整性的关系。在赝晶CaF 2层上生长的CdF 2层的晶体完整性比在弛豫CaF 2层上生长的CdF 2层的晶体完整性好得多。结果表明，在低至50°C的生长温度下，可以在赝晶CaF 2层上生长出具有高结构质量的外延CdF 2薄膜。
The effects of growth temperature and structural perfection of the CaF2 buffer layer on the crystallinity of CdF2 layers grown on CaF2/Si(111) substrates by molecular beam epitaxy (MBE) were investigated by double-crystal X-ray diffractometry (XRD). The crystal perfection of CdF2 layers grown on pseudomorphic CaF2 layers was considerably better than that of CdF2 layers grown on relaxed CaF2 layers. It was shown that epitaxial CdF2 films with high structural quality can be grown on the pseudomorphic CaF2 layer at growth temperatures as low as 50°C.