Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
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DOI：
10.1007/s10825-006-8851-0
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发表时间：
2006-07
影响因子：
2.1
通讯作者：
M. Pala;C. L. Royer;G. Carval;L. Clavelier
中科院分区：
文献类型：
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作者：
M. Pala;C. L. Royer;G. Carval;L. Clavelier
锗被研究作为先进CMOS节点的基本半导体。本文从CVT模型出发，建立了低场下Ge器件的迁移率模型，并通过与实验的对比，对模型参数进行了标定。采用漂移扩散模型和能量平衡输运模型对全耗尽绝缘体上锗（GeOI）n型和p型MOSFET进行了TCAD模拟。通过改变Ge材料的能量弛豫时间和分析通道中的速度过冲现象，估计了由于小型器件中的非平衡输运引起的影响。据发现，GeOI MOSFET提供强大的性能改善时，被认为是由于非局部效应的影响，短的设备长度。
Germanium is investigated as basic semiconductor for advanced CMOS nodes. A mobility model at low fields for Ge devices is developed starting from the CVT model, whose parameters are calibrated by comparison with experiments. TCAD simulations of Fully-Depleted (FD) Germanium-On-Insulator (GeOI)n- andp-MOSFETs are presented using both the drift-diffusion and the energy balance transport models. Effects due to non-equilibrium transport in small devices are estimated by varying the energy-relaxation time of the Ge material and by analyzing the phenomenon of velocity overshoot in the channel. It is found that GeOI MOSFETs furnish robust performance improvements when short device lengths are considered due to the influence of non-local effects.