Injection of a magnetic domain wall into a submicron magnetic wire
Injection of a magnetic domain wall into a submicron magnetic wire
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DOI：
10.1063/1.125159
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发表时间：
1999-10
影响因子：
4
通讯作者：
K. Shigeto;T. Shinjo;T. Ono
中科院分区：
文献类型：
--
作者：
K. Shigeto;T. Shinjo;T. Ono
制备了两种由NiFe（20 nm）/Cu（20 nm）/Co（20 nm）组成的三层结构的磁线（宽度为150 nm）。一个一端连接到方形焊盘（0.5×0.5 μm2），另一个具有对称形状，两端平坦。磁电阻测量灵敏地检测到磁化反转。有焊盘的导线的Co层的开关场比没有焊盘的导线的开关场小得多。这表明畴壁最初在焊盘中成核，并在开关场处注入到导线中。该模型的磁化反转过程的开关场的角度依赖性的支持。
Two types of magnetic wires (150 nm width) with trilayer structure consisting of NiFe (20 nm)/Cu (20 nm)/Co (20 nm) were prepared. One was connected to a square pad (0.5×0.5 μm2) at one end, while the other has a symmetrical shape with two flat ends. Magnetization reversal was detected sensitively by magnetoresistance measurement. Switching field of the Co layer for the wire with a pad was much smaller than that for the wire without a pad. This indicates that a domain wall nucleates initially in the pad and is injected into the wire at the switching field. This model for the magnetization reversal process is supported by the angular dependence of the switching field.