Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor‐phase epitaxy
Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor‐phase epitaxy
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DOI：
10.1063/1.1697645
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发表时间：
2004-04
影响因子：
4
通讯作者：
P. Mohan;J. Motohisa;T. Fukui
中科院分区：
文献类型：
--
作者：
P. Mohan;J. Motohisa;T. Fukui
报道了基于InAs量子线的二维半导体人工晶格的实验实现。用单胞尺寸为0.7 μm的InAs量子线制作的人工Kagome晶格，在理论上证明了其具有铁磁性。利用GaAs（111）A衬底，通过选择性区域金属有机物气相外延，尝试了这种InAs量子线结构的制备。观察到随温度变化的生长模式，高温下的Volmer-Weber生长模式抑制了均匀结构的形成。在低温和低AsH 3分压条件下成功制备了0.7 μm周期的InAs基Kagome晶格结构。
The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit cell size 0.7 μm has been theoretically proved to show ferromagnetism. Fabrication of such a structure with InAs quantum wires was attempted by selective area metalorganic vapor phase epitaxy using GaAs (111)A substrates. Temperature-dependent growth mode change was observed and Volmer-Weber growth mode at high temperature inhibited the formation of uniform structure. Low temperature and low AsH3 partial pressure resulted in the successful fabrication of 0.7 μm period InAs-based Kagome lattice structure.