Shape Evolution and Control of Wurtzite CdSe Nanocrystals through a Facile One-Pot Strategy

Shape Evolution and Control of Wurtzite CdSe Nanocrystals through a Facile One-Pot Strategy
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DOI:
10.1021/acs.jpcc.1c04643
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发表时间:
2021-09
期刊:
The Journal of Physical Chemistry C
影响因子:
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通讯作者:
Haoran Zhang;Zetan Cao;Jia He;Zhiwen Liu;Simin Peng;Xi Liu;Bin Chen
Haoran Zhang;Zetan Cao;Jia He;Zhiwen Liu;Simin Peng;Xi Liu;Bin Chen
中科院分区:
其他
文献类型:
--
作者:
Haoran Zhang;Zetan Cao;Jia He;Zhiwen Liu;Simin Peng;Xi Liu;Bin Chen

文献摘要

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具有六方纤锌矿(WZ)结构(如纳米棒)的一维CdSe纳米晶体(NCs)的合成在过去几年里得到了很好的发展。然而,WZ-CdSe的二维/三维形态调制仍然具有挑战性,因为其固有的六边形单元和所涉及的配体选择性地结合到特定的晶体面。在这里,我们提出了一种简单而通用的一锅方法来控制WZ-CdSe nc的形状,而不使用预先存在的种子。有趣的是,与传统的一次性注射相比,滴注模式下的低过饱和度可以控制和形成各种形状,包括纳米棒、长纳米线和六边形血小板。这种形状演变可以通过温度、生长时间和注射速率等参数方便地进行调整。在动力学/热力学因素的背景下,讨论了形态演化和控制的潜在生长机制。我们的研究提供了对多型化合物nc形状调制的基本理解,为调整光电子应用的形状-尺寸-性质关系提供了很大的机会。
The synthesis of one-dimensional (1D) CdSe nanocrystals (NCs) with hexagonal wurtzite (WZ) structures such as nanorods has been well developed over the past years. However, the shape modulation of WZ-CdSe with two-dimensional (2D)/three-dimensional (3D) morphologies remains challenging because of its intrinsic hexagonal unit and the involved ligands selectively binding to specific crystal facets. Here, we present a facile and general one-pot approach for the shape control of WZ-CdSe NCs without using pre-existing seeds. Interestingly, the low supersaturation in a drip injection mode enabled the control and formation of various shapes including the nanorods, long nanowires, and hexagonal platelets, compared to the traditional one-time injection. Such shape evolutions could be conveniently tuned by the parameters such as the temperature, growth time, and injection rates. The underlying growth mechanisms for the morphological evolution and control were discussed in the context of kinetic/thermodynamic factors. Our studies provide a fundamental understanding of shape modulations in polytypic compound NCs, offering great opportunities to tune the shape–size–property relationship for optoelectronic applications.