Properties of GaN nanowires with Sc x Ga 1 -x N insertion
Properties of GaN nanowires with Sc x Ga 1 -x N insertion
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Sc x Ga 1 -x N 插入的 GaN 纳米线的特性
DOI：
10.1002/pssb.201600740
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Bao A
中科院分区：
文献类型：
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作者：
Bao A
我们报道了第一个GaN/ ScxGa1-xN轴向异质结构的GaN纳米线结构。采用等离子体辅助分子束外延（PA - MBE）技术，将20nm的ScxGa1−xN层插入到无催化剂自组装法生长的GaN纳米线中。通过扫描透射电子显微镜（STEM - EDX）的能量色散X射线光谱对插入物进行了表征。高分辨率电子显微镜显示，ScxGa1−xN具有纤锌矿晶体结构。在77 K的扫描电镜（SEM）中，阴极发光（CL）成像显示在377 nm处有一个发射峰，这在没有插入ScxGa1−xN的样品中是不存在的。利用STEM‐EDX和低温SEM‐CL进行的相关研究表明，377 nm发射与ScxGa1−xN插入之间存在直接联系。这暂时归因于GaN和ScxGa1−xN插入之间的II型带偏移。
We report the first GaN nanowire structure incorporating a GaN/ScxGa1–xN axial heterostructure. A 20 nm ScxGa1−xN layer was inserted into GaN nanowires grown by a catalyst‐free self‐assembled method using plasma‐assisted molecular beam epitaxy (PA‐MBE). The insertion was characterised by energy dispersive X‐ray spectroscopy in the scanning transmission electron microscope (STEM‐EDX). High resolution electron microscopy revealed the ScxGa1−xN to have a wurtzite crystal structure as expected at this composition. Cathodoluminescence (CL) imaging in the scanning electron microscope (SEM) at 77 K revealed an emission peak at 377 nm which is not present in samples without the ScxGa1−xN insertion. A correlative study using STEM‐EDX and low temperature SEM‐CL indicates a direct link between the 377 nm emission and the ScxGa1−xN insertion. This is tentatively attributed to a type‐II band offset between the GaN and the ScxGa1−xN insertion.