A study of Schottky contacts on indium phosphide
A study of Schottky contacts on indium phosphide
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磷化铟肖特基接触的研究
DOI：
10.1063/1.332745
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发表时间：
1983
影响因子：
3.2
通讯作者：
G. Y. Robinson
中科院分区：
文献类型：
--
作者：
E. Hökelek;G. Y. Robinson
测量了Al、Ni、Pd、Co、Au和Ag接触在p型和n型InP化学蚀刻的100 μ m表面上的肖特基势垒能φB，并使用俄歇电子能谱研究了接触结构的冶金行为。在InP上测得的肖特基势垒能与接触金属的功函数或电负性之间没有简单的线性关系。因此，这一结果不能用传统的肖特基和巴氏理论来解释。然而，对于接触金属和InP衬底之间可能形成的最稳定的金属磷化物，观察到肖特基势垒能量和每分子式单位的反应热ΔHr之间存在非常明确的关系。其磷化物不如InP稳定的接触金属Au和Ag（即，ΔHr >0）产生了扩散界面，其特征是In的大量向外扩散，并产生了较低的φBp值，即p型InP上的肖特基势垒能量;而t.
The Schottky‐barrier energy φB for Al, Ni, Pd, Co, Au, and Ag contacts on chemically etched 〈100〉 surfaces of both p‐ and n‐type InP was measured and the metallurgical behavior of the contact structures was studied using Auger‐electron spectroscopy. No simple linear relationship could be found between the measured Schottky barrier energies on InP and the work functions or the electronegativities of the contact metals. Therefore, the results could not be explained in terms of the traditional Schottky and Bardeen theories. However, a very well defined relationship was observed between the Schottky barrier energies and the heats of reaction per formula unit ΔHr for the most stable metal phosphides that could be formed between the contact metals and the InP substrate. The contact metals Au and Ag whose phosphides are less stable than InP (i.e., ΔHr >0) produced diffuse interfaces, characterized by extensive outdiffusion of In, and yielded low values of φBp, the Schottky‐barrier energy on p‐type InP; whereas t...