3 THz sideband generation by electro-optic modulation and the application to ultrashort pulse genera
3 THz sideband generation by electro-optic modulation and the application to ultrashort pulse genera
复制标题
电光调制3 THz边带产生及其在超短脉冲发生器中的应用
DOI:
10.1109/cleopr.1995.527190
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发表时间:
1995
期刊:
影响因子:
--
通讯作者:
Tetsuro Kobayashi
中科院分区:
文献类型:
--
作者:
A. Morimoto;M. Tamaru;Y. Matsuda;M. Arisawa;Tetsuro Kobayashi
We have developed a laser diode that provides a spot size ratio of 1:2.1, making it promising for optical printing and recording.’ A schematic view of the developed laser diode is shown in Fig. 1. It is fabricated by using metal-organic chemical vapor deposition, as were the previously reported buried stripe lasers? The structure has a flared stripe with a twininjection striped modulation region at the base of the flared structure. The main electrode and the subsidiary electrode for the modulator are separated by channels formed in the p-type GaAs contact layer and in the Au electrodes. Cross-sections A-A’ and B-8’ are shown schematically in Fig. 2. The injection current profile in the A-A‘ crosssection is the same as that of a conventional gain guide laser diode. However, the B-B’ cross-section has a twin injection