Organic inkjet-patterned memory array based on ferroelectric field-effect transistors
Organic inkjet-patterned memory array based on ferroelectric field-effect transistors
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DOI：
10.1016/j.orgel.2011.08.019
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发表时间：
2011-12-01
影响因子：
3.2
通讯作者：
Arias, Ana Claudia
中科院分区：
文献类型：
--
作者：
Tse Nga Ng;Russo, Beverly;Arias, Ana Claudia
采用非易失性的铁电场效应晶体管制备了一种喷墨图案的柔性有机存储阵列，该阵列在0.6%的拉伸应变下保持功能。每个存储单元由寻址晶体管和铁电存储器晶体管组成。相邻电池之间的串扰小于20%，并且在7 × 8阵列中二进制存储状态保持至少8小时。打印存储晶体管之间的变化被表征并显示是由半导体-铁电界面中不同的电荷俘获率引起的。(C) 2011 Elsevier b.v.版权所有
An inkjet-patterned, flexible organic memory array was demonstrated using non-volatile ferroelectric field-effect transistors which remained functional below 0.6% tensile strain. Each memory cell is comprised of an addressing transistor and a ferroelectric memory transistor. Less than 20% cross-talk was observed between neighboring cells, and binary memory states in a 7 x 8 array were retained for at least 8 h. Variations among the printed memory transistors were characterized and shown to be caused by different rates of charge trapping in the semiconductor-ferroelectric interface. (C) 2011 Elsevier B. V. All rights reserved.