A new approach to the determination of the Fano factor for semiconductor detectors
A new approach to the determination of the Fano factor for semiconductor detectors
复制标题
确定半导体探测器法诺因子的新方法
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
E. Papp
中科院分区：
文献类型：
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作者：
T. Papp;M. Lépy;J. Plagnard;G. Kalinka;E. Papp
范诺因子的数值在文献中广泛分散，表明其确定困难。我们选择同时分析Ge探测器光谱中的逃逸峰和母峰，其中母峰穿透深度和逃逸峰逃逸深度远大于不完全电荷收集区的大小。因此，尽管实际沉积的能量很低，但由于在不完全电荷收集区之外沉积，预计逸出峰中不会有低能尾砂。发现电子-空穴对产生能(e)与Fano因子(F)的乘积在低能时具有能量依赖性，正如电子输运理论所期望的那样。虽然预计e有自己的能量依赖，但如果假设e的参考值为2.96 eV，则Fano因子值在0.059至0.083之间变化。逸出峰对Si不太有利，因此对Si（Li）探测器采用了不同的方法。假设e的参考值为3.8 eV，则x射线能量为5.9 keV时，Fano因子为0.063。我们认为这里报告的Fano因子是上限，而不是平均值。版权所有©2004 John Wiley & Sons， Ltd
Values of the Fano factor are widely scattered in the literature, indicating the difficulties in its determination. We chose to analyze both the escape peaks and parent peaks of Ge detector spectra where the parent peak penetration depth and the escape peak escape depth are much larger than the size of the incomplete charge collection region. Hence, the escape peaks are expected to be free of low-energy tailing as, although the actually deposited energy is low, it is deposited beyond the incomplete charge collection region. It was found that the product of electron–hole pair creation energy (e) and the Fano factor (F) has an energy dependence at low energies, as is expected from electron transport theories. Although e is expected to have its own energy dependence, if a reference value of 2.96 eV is assumed for e, then the Fano factor values varied between 0.059 and 0.083. The escape peak is less advantageous for Si, hence a different method was used for Si(Li) detectors. Assuming the reference value of 3.8 eV for e, the Fano factor was found to be 0.063 at 5.9 keV x-ray energy. We consider the Fano factors reported here as upper limits, rather than the mean values. Copyright © 2004 John Wiley & Sons, Ltd.