Synthesis and physical properties of a new single-component molecular conductor [Au(dhdt)2]
Synthesis and physical properties of a new single-component molecular conductor [Au(dhdt)2]
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新型单组分分子导体[Au(dhdt)2]的合成及物理性质
DOI：
10.1016/j.poly.2008.10.012
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发表时间：
2009
期刊：
影响因子：
2.6
通讯作者：
H. Oshio
中科院分区：
文献类型：
--
作者：
H. Nishikawa;Wataru Yasuoka;Kumiko Sakairi;H. Oshio
我们成功地合成了四丁基铵或四苯基膦盐与二氢四氢三氟化铁-二硫杂环氧配体dhdt2−(4，5-dihydrotetrathiafulvalene-4，5-dithiolato)配位的新的Au(Ⅲ)配合物。对(Ph_4P)[Au(Dhdt)_2]的晶体结构分析表明，Au(III)离子为正方形平面配位，Au-S平均键长表明Au(III)离子处于三价Au(III)态。通过(n-Bu4N)[Au(Dhdt)2]的电化学氧化得到了中性络合物[Au(Dhdt)2]。[Au(Dhdt)2]的导电行为为半导性，室温电导率为8.3Scm−1，活化能为23 meV。[Au(Dhdt)2]的磁化率可以用居里分量和温度无关分量之和很好地解释。
We have succeeded in synthesizing a new Au(III) complex coordinated by a dihydro-TTF-ditiolato ligand, dhdt2−(4,5-dihydrotetrathiafulvalene-4,5-dithiolato) as a tetrabutlylammoium or tetraphenylphosphonium salt. Crystal structural analysis of (Ph4P)[Au(dhdt)2] revealed that the Au(III) ion adopts a square planar coordination and the mean Au–S bond length suggests the Au ions are in the trivalent Au(III) state. A neutral complex, [Au(dhdt)2], was obtained by the electrochemical oxidation of (n-Bu4N) [Au(dhdt)2]. Conducting behavior of [Au(dhdt)2] was semiconductive with conductivity at room temperature of 8.3Scm−1and activation energy of 23meV. Magnetic susceptibility of [Au(dhdt)2] was well explained by the sum of the Curie and temperature independent components.
影响因子：
15
作者：
Suzuki, W;Fujiwara, E;Kobayashi, H
通讯作者：
Kobayashi, H
由前所未有的 π 电子供体组成的新型有机超导体
DOI：
--
发表时间：
2002
期刊：
J.Am.Chem.Soc. 124
影响因子：
--
作者：
R.Shibaeva;H.Nishikawa;J.Yamada;J.Yamada;T.Amano;E.S.Choi;K.Furuta;J.Yamada;J.Yamada;E.S.Choi;H.Nishikawa;J.Yamada;Hiroki Akutsu;Irina Shevyakova;Jun-ichi Yamada;Eun S.Choi;Jun-ichi Yamada;Jun-ichi Yamada;H.Nishikawa;S.Nakatsuji;E.S.Choi;S.Nakatsuji;T.Kaneko;H.Akutsu;J.Yamada;H.Akutsu;H.Akutsu;Y.Ogawa;J.Yamada;K.Nomura;A.Hoshikawa;N.Matsunaga;K.Yamashita;J.Yamada;H.Nishikawa;Y.Shimojo;T.Arai;T.Mizutani;H.Ito;E.Ohmichi;J.YAMADA;N.Matsunaga;K.Yokoyama;Y.Shimojo;F.Setifi;A.Miyazaki;K.Kikuchi;H.Ito;H.Nishikawa;E.Ohmichi;M.A.Tanatar;A.Miyazaki;N.Matsunaga;K.Nomura;F.Setifi;H.Akutsu;J.Yamada;H.Akutsu;H.Aklutsu;Y.Ogawa;T.Arai;T.Mizutani;E.Ohmichi;J.Yamada;S.Setifi;A.Miyazaki;K.Nomura;F.Setifi;H.Nishikawa
通讯作者：
H.Nishikawa
影响因子：
56.9
作者：
Tanaka, H;Okano, Y;Kobayashi, A
通讯作者：
Kobayashi, A