High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers
High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers
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DOI：
10.1063/1.4809730
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发表时间：
2013-06
影响因子：
4
通讯作者：
V. Sichkovskyi;Michal Waniczek;J. Reithmaier
中科院分区：
文献类型：
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作者：
V. Sichkovskyi;Michal Waniczek;J. Reithmaier
研究了InAs/InP量子点层（QDL）数量在1-3个QDL范围内对1.55 μm发射激光器静态参数的影响。由于每个QDL的高模式增益为Γ g 0 ≥ 15.5 cm-1，因此可以以11 mW的总输出功率实现仅具有单个QDL的激光器的基态激射。通过优化量子点数目和腔长，可以从本质上稳定发射波长的温度依赖性，在590 μm长的激光器中，采用2个量子点，发射波长漂移仅为0.078 nm/K。
The effect of the number of InAs/InP quantum dot layers (QDLs) on the static parameters of 1.55 μm emitting lasers was studied in the range of 1–3 QDLs. Due to the high modal gain of Γg0 ≥ 15.5 cm−1 per QDL ground state lasing of lasers with only a single QDL could be achieved with 11 mW total output power. By optimizing the QDLs number and the cavity length, the temperature dependence of the emission wavelength can be intrinsically stabilized resulting in an ultra-low emission wavelength shift of 0.078 nm/K for a 590 μm long laser with 2 QDLs.