Nanoscale structural damage due to focused ion beam milling of silicon with Ga-ions
Nanoscale structural damage due to focused ion beam milling of silicon with Ga-ions
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DOI：
10.1016/j.matlet.2017.11.043
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发表时间：
2018-02-15
影响因子：
3
通讯作者：
Korsunsky, A. M.
中科院分区：
文献类型：
--
作者：
Salvati, E.;Brandt, L. R.;Korsunsky, A. M.
样品暴露于聚焦离子束下会导致ga离子注入、损伤、材料非晶化和残余应力源的引入；即eigenstrain。在这项研究中，我们采用同步加速器x射线反射率技术来表征暴露在ga离子束下单晶硅样品中产生的非晶层。从反射率曲线分析中提取了非晶层的厚度、密度和界面粗糙度。结果与文献中报道的分子动力学和透射电镜成像的残余应力分析评估的特征应变谱进行了比较。(c) 2017 Elsevier B.V.版权所有
The exposure of sample to Focused Ion Beam leads to Ga-ion implantation, damage, material amorphisation, and the introduction of sources of residual stress; namely eigenstrain. In this study we employ synchrotron X-ray Reflectivity technique to characterise the amorphous layer generated in a single crystal Silicon sample by exposure to Ga-ion beam. The thickness, density and interface roughness of the amorphous layer were extracted from the analysis of the reflectivity curve. The outcome is compared with the eigenstrain profile evaluated from residual stress analysis by Molecular Dynamics and TEM imaging reported in the literature. (c) 2017 Elsevier B.V. All rights reserved.