High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
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DOI：
10.1063/1.3677669
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发表时间：
2012-01-16
影响因子：
4
通讯作者：
Wang, Jiannong
中科院分区：
文献类型：
--
作者：
He, Hongtao;Li, Baikui;Wang, Jiannong
在拓扑绝缘体Bi₂Se₃薄膜的高磁场中观察到线性磁阻。倾斜磁场测量表明，这种线性磁阻与无带隙拓扑表面态有关，且具有量子起源。在超薄极限下，表面间隧穿诱导的表面态能隙打开抑制了线性磁阻。相反，在超薄薄膜的高磁场中观察到弱负磁阻。（C）2012美国物理学会。[doi:10.1063/1.3677669]
Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. (C) 2012 American Institute of Physics. [doi:10.1063/1.3677669]