Electrical control of interfacial trapping for magnetic tunnel transistor on silicon
Electrical control of interfacial trapping for magnetic tunnel transistor on silicon
复制标题
硅上磁隧道晶体管界面俘获的电控制
DOI：
10.1063/1.4863689
复制
发表时间：
2014
影响因子：
4
通讯作者：
M. W. Wu
中科院分区：
文献类型：
--
作者：
Yuan Lu;D. Lacour;G. Lengaigne;S. D. Gall;S. Suire;F. Montaigne;M. Hehn;M. W. Wu
通过研究键合硅衬底上的磁隧道晶体管，我们证明了热电子注入硅中界面俘获效应的电控制。低于25 K，热电子被困在Cu/Si界面，导致集电极电流抑制通过散射在平行和反平行磁配置。因此，磁流比从27 K时的300%大幅下降到22 K时的30%。在Cu/Si界面上施加一个相对较小的电场（~ 333 V/cm）就足以剥离被俘获的电子并恢复低温下的磁流比。我们还提出了一个模型，考虑到电场和温度的影响，密切再现的实验结果，并允许提取的捕获结合能（1.6毫电子伏）。
We demonstrate an electrical control of an interfacial trapping effect for hot electrons injected in silicon by studying a magnetic tunnel transistor on wafer bonded Si substrate. Below 25 K, hot electrons are trapped at the Cu/Si interface, resulting in collector current suppression through scattering in both parallel and antiparallel magnetic configurations. Consequently, the magneto-current ratio strongly decreases from 300% at 27 K to 30% at 22 K. The application of a relatively small electric field (∼333 V/cm) across the Cu/Si interface is enough to strip the trapped electrons and restore the magneto-current ratio at low temperature. We also present a model taking into account the effects of both electric field and temperature that closely reproduces the experimental results and allows extraction of the trapping binding energy (∼1.6 meV).
Fe/GaAs(001) 肖特基界面的自旋滤波效应
DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
E. Wada;M. Itoh;T. Taniyama
通讯作者：
T. Taniyama