ZnO-based interdigitated MSM and MISIM ultraviolet photodetectors
ZnO-based interdigitated MSM and MISIM ultraviolet photodetectors
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DOI：
10.1088/0022-3727/43/41/415103
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发表时间：
2010-10-01
影响因子：
3.4
通讯作者：
Chakrabarti, P.
中科院分区：
文献类型：
--
作者：
Ali, Ghusoon M.;Chakrabarti, P.
本文报道了zno基互指金属-半导体-金属（MSM）和金属-绝缘体-半导体-绝缘体-金属（MISIM）紫外探测器的制备和表征。采用溶胶-凝胶法在Si < 1 0 0 >的p型衬底上生长ZnO薄膜。在-3 ~ 3v的电压范围内，我们估计了在365 nm紫外波长下0.1 mW入射光功率下光电探测器的对比度、响应率、探测率和量子效率。研究了其I-V特性，并从实测数据中提取了理想因数、漏电流和势垒高度等参数。对于Au/Cr/SiO2/ZnO/SiO2/Al （MISIM）结构，还提取了隧穿有效电子质量(m)与平均隧穿势垒高度（chi）的乘积（m chi）。
The paper reports the fabrication and characterization of ZnO-based interdigitated metal-semiconductor-metal (MSM) and metal-insulator-semiconductor-insulator-metal (MISIM) ultraviolet photodetectors. The ZnO thin film was grown on a p-type Si < 1 0 0 > substrate by the sol-gel technique. With applied voltage in the range from -3 to 3 V we estimated the contrast ratio, responsivity, detectivity and quantum efficiency of the photodetectors for an incident optical power of 0.1 mW at 365 nm ultraviolet wavelength. The I-V characteristics were studied and the parameters such as ideality factor, leakage current and barrier height were extracted from the measured data. For Au/Cr/SiO2/ZnO/SiO2/Al (MISIM) structure the product (m chi) of the tunnelling effective electron mass (m) and the mean tunnelling barrier height (chi) was also extracted.