Surface-state density and surface potential in MIS capacitors by surface photovoltage measurements. I
Surface-state density and surface potential in MIS capacitors by surface photovoltage measurements. I
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DOI：
10.1088/0022-3727/4/9/318
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发表时间：
1971-09
期刊：
影响因子：
--
通讯作者：
Y. W. Lam
中科院分区：
文献类型：
--
作者：
Y. W. Lam
本文介绍了一种测量MIS电容器表面态密度和表面电位的简单方法。它在原理上类似于低频电容法，只要在表面电位和施加到栅电极的电压之间建立直流关系即可。这通过测量饱和表面光电压来实现。该方法与低频电容法的不同之处在于，它直接测量表面电位，不需要附加常数。文中给出的实验结果与低频电容法所得结果吻合较好。本方法与Lam和Rhoderick（配套论文）描述的第二种方法是互补的，因为通过第一种方法可测量的表面态密度有一个下限，而通过第二种方法可测量的表面态密度有一个上限，这两种方法在空间电荷电容值处重叠。
A simple method is described for the measurement of surface-state density and surface potential in a MIS capacitor. It is similar in principle to the low frequency capacitance method in so far as a dc relationship is established between the surface potential and the voltage applied to the gate electrode. This is achieved by measuring the saturation surface photovoltage. The method differs from the low frequency capacitance method in that it measures the surface potential directly, requiring no additive constant. Experimental results are presented which agree well with those obtained by the low frequency capacitance method. The present method is complementary to a second method to be described by Lam and Rhoderick (companion paper) in that the surface-state density measurable by this first method has a lower limit while that by the second method has an upper limit, the two overlapping at the value of the space-charge capacitance.