Topological Hall effect and Berry phase in magnetic nanostructures
Topological Hall effect and Berry phase in magnetic nanostructures
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DOI：
10.1103/physrevlett.93.096806
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发表时间：
2004-08-27
影响因子：
8.6
通讯作者：
Taillefumier, M
中科院分区：
文献类型：
--
作者：
Bruno, P;Dugaev, VK;Taillefumier, M
本文讨论了二维电子气在空间变化磁化强度作用下的反常霍尔效应。这种拓扑霍尔效应不需要任何自旋-轨道耦合，并且仅由在平滑变化的磁化中移动的电子获得的Berry相位引起。我们提出了一个实验与结构包含2D电子或稀磁半导体受杂散磁场的晶格的磁性纳米柱的空穴。对于这样一个系统（其所有相关参数都是众所周知的）预测的惊人行为允许人们明确地观察拓扑霍尔效应，并将其与其他机制区分开来。
We discuss the anomalous Hall effect in a two-dimensional electron gas subject to a spatially varying magnetization. This topological Hall effect does not require any spin-orbit coupling and arises solely from Berry phase acquired by an electron moving in a smoothly varying magnetization. We propose an experiment with a structure containing 2D electrons or holes of diluted magnetic semiconductor subject to the stray field of a lattice of magnetic nanocylinders. The striking behavior predicted for such a system (of which all relevant parameters are well known) allows one to observe unambiguously the topological Hall effect and to distinguish it from other mechanisms.