Physical Model for High-to-Low Resistive Switching of Gold Nanogap Junction
Physical Model for High-to-Low Resistive Switching of Gold Nanogap Junction
复制标题
金纳米间隙结从高到低电阻切换的物理模型
DOI：
10.1143/jjap.50.06gf10
复制
发表时间：
2011
影响因子：
1.5
通讯作者：
M. Horikawa
中科院分区：
文献类型：
--
作者：
Y. Naitoh;H. Suga;M. Horikawa
研究了金纳米间隙结阻变的电学特性，探讨了该结由高变低阻变的物理模型。在切换期间的阈值电压与紧接在切换之前的电阻的对数成比例。结果表明，阈值电压与电场有关，其临界值约为1.8V/nm。这意味着高到低的电阻转换可以用场致迁移模型来解释。
Electric properties of resistive switching in gold nanogap junction were investigated to discuss a physical model of high-to-low resistive switching of the junction. The threshold voltages during the switching are in proportion to logarithm of resistances immediately before the switching. This result indicates that the threshold voltages are depended on electric field, the critical value of which is estimated at about 1.8 V/nm. This implies that the high-to-low resistive switching can be explained by field-induced-migration model.