Field-free current-induced magnetization switching in GdFeCo: A competition between spin–orbit torques and Oersted fields
Field-free current-induced magnetization switching in GdFeCo: A competition between spin–orbit torques and Oersted fields
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DOI：
10.1063/5.0091944
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发表时间：
2022-08
影响因子：
3.2
通讯作者：
J. Bello;Y. Quessab;Jun-Wen Xu;M. Vergés;Héloïse Damas;S. Petit-Watelot;J. Rojas Sánchez;M. Hehn;A. Kent;S. Mangin
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文献类型：
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作者：
J. Bello;Y. Quessab;Jun-Wen Xu;M. Vergés;Héloïse Damas;S. Petit-Watelot;J. Rojas Sánchez;M. Hehn;A. Kent;S. Mangin
通过自旋轨道扭矩（SOT）切换垂直磁化在非易失性磁性随机存取存储器（MRAM）器件的开发中特别令人感兴趣。我们研究了霍尔十字几何结构中 Ir/GdFeCo/Cu/Pt 异质结构的电流感应磁化强度随面内施加磁场的变化。值得注意的是，在零外加磁场下观察到磁化翻转。这被证明是 SOT、充电电流产生的奥斯特场和材料矫顽力之间竞争的结果。我们的结果展示了一种实现零场开关的方法，可以影响未来自旋电子器件（例如 SOT-MRAM）的设计。
Switching of perpendicular magnetization via spin–orbit torque (SOT) is of particular interest in the development of non-volatile magnetic random access memory (MRAM) devices. We studied current-induced magnetization switching of Ir/GdFeCo/Cu/Pt heterostructures in a Hall cross geometry as a function of the in-plane applied magnetic field. Remarkably, magnetization switching is observed at zero applied field. This is shown to result from the competition between SOT, the Oersted field generated by the charge current, and the material's coercivity. Our results show a means of achieving zero-field switching that can impact the design of future spintronics devices, such as SOT-MRAM.