Growth of GaN crystals by Na flux LPE method
Growth of GaN crystals by Na flux LPE method
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DOI：
10.1002/pssa.200983482
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发表时间：
2010-06-01
影响因子：
2
通讯作者：
Sasaki, T.
中科院分区：
文献类型：
--
作者：
Mori, Y.;Kitaoka, Y.;Sasaki, T.
III族氮化物半导体领域需要高质量和低成本的块体晶体，以开发光学和电学器件。控制生长过程中的成核现象和溶液条件对Na助熔剂法生长GaN体材料具有重要意义。碳掺杂和溶液流动的强制诱导是有效的控制方法。我们也提出了一些尝试，以提高质量的种子衬底的梨大小的块状GaN晶体的制造。(C)2010 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
High-quality and low-cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux method. The carbon doping into the solution and the forced induction of solution flow are effective to control them. We also present some attempts for improving the quality of seed substrate for fabrication of boule-sized bulk GaN crystals. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim