Temperature Dependent Thermal Resistances at GaN-Substrate Interfaces in GaN Composite Substrates
Temperature Dependent Thermal Resistances at GaN-Substrate Interfaces in GaN Composite Substrates
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GaN 复合衬底中 GaN-衬底界面处的温度相关热阻
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
K. Goodson
中科院分区：
文献类型：
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作者：
Jungwan Cho;Yiyang Li;D. Altman;W. Hoke;M. Asheghi;K. Goodson
利用皮秒时域热反射（TDTR）技术研究了两种GaN复合衬底（GaN-SiC和GaN-Si）的温度特性。GaN缓冲膜的本征热导率随着温度的升高而降低，而GaN-衬底界面热阻（TIR）随着温度的升高而增加。GaN衬底TIR的强烈温度依赖性表明AlN过渡膜内及其边界附近的微结构缺陷可能特别重要。
We report the temperature dependent thermal properties of two types of GaN composite substrates (GaN-SiC and GaN-Si) using picosecond time-domain thermoreflectance (TDTR). The intrinsic thermal conductivity of the GaN buffer film decreases with increasing temperature, while the GaN-substrate thermal interface resistance (TIR) increases with increasing temperature. The strong temperature dependence of the GaN-substrate TIR suggests that microstructural defects within the AlN transition film and near its boundaries can be particularly important.