Silicon Carbide Die Attach Scheme for 500°C Operation
Silicon Carbide Die Attach Scheme for 500°C Operation
复制标题
适用于 500°C 操作的碳化硅芯片粘接方案
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
P. Neudeck
中科院分区：
文献类型：
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作者：
Liangyu Chen;G. Hunter;P. Neudeck
单晶碳化硅（SiC）具有如此优异的物理、化学和电子特性，使得基于SiC的半导体电子器件可以在超过600°C的温度下工作，远远超过了基于Si的半导体器件的高温极限。SiC半导体器件已被证明可在高达600°C的温度下工作，但仅在探针站环境中工作，部分原因是用于高温（500°C及以上）器件的合适封装技术仍在开发中。高温电子封装所需的核心技术之一是具有低电阻和稳定电阻的半导体芯片贴装。本文讨论了一种低电阻芯片贴装方法，并在室温和500°C空气中进行了测试的结果。使用基于贵金属的厚膜材料将1 mm 2 SiC肖特基二极管管芯附接到氮化铝（AlN）和96%纯氧化铝陶瓷衬底。使用该方案的附接的测试管芯在500°C下在空气的氧化环境中经受了550小时的电子和机械性能以及稳定性测试。在热处理之前和热处理期间通过附接二极管的正向I-V曲线估计的管芯附接界面的电阻的上限表明在整个550小时测试期间在室温和500°C下稳定且低的附接电阻。并对今后的耐久性试验进行了讨论。
Single crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm 2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.