Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions
Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions
复制标题
DOI：
10.3389/fphy.2019.00104
复制
发表时间：
2019-07-23
影响因子：
3.1
通讯作者：
Pavesi, Lorenzo
中科院分区：
文献类型：
--
作者：
Castellan, Claudio;Franchi, Riccardo;Pavesi, Lorenzo
横向p-n结中的硅波导表现出场致光学非线性。通过适当地极化结，这些可以用于通过直流克尔效应实现电光调制。此外，这些使二阶非线性过程，如电场诱导的二次谐波产生（EFISHG）。在这项工作中，我们详细研究了集成硅微谐振器中的电光效应，并在实验上证明了场致谐振波长漂移。这个过程是由于直流克尔效应和等离子体色散效应。通过有限元方法模拟，这些影响被正确地建模，它们的贡献被准确地解开。提供相同电光效应的等效二阶非线性系数的强度约为16 pm/V。这一结果与具有本征二阶非线性的材料的强度相当，并且比硅中应变诱导普克尔斯效应的最新测量强一个数量级。
Silicon waveguides embedded in lateral p-n junctions show field-induced optical nonlinearities. By properly polarizing the junction, these can be used to achieve electro-optic modulation through the Direct Current Kerr effect. In addition, these enable second-order nonlinear processes such as the electric-field-induced second harmonic generation (EFISHG). In this work, we study in detail electro-optic effects in integrated silicon microresonators and demonstrate experimentally a field-induced resonance wavelength shift. This process is due to both the DC Kerr effect and the plasma-dispersion effect. By means of finite element method simulations, these effects are properly modeled and their contributions are accurately disentangled. The strength of the equivalent second-order nonlinear coefficient that would have provided the same electro-optic effect is about 16 pm/V. This result is comparable with that of materials possessing an intrinsic second order nonlinearity, and is one order of magnitude stronger than the most recent measurements of strain-induced Pockels effect in silicon.