HAXPES study of CeOx thin film - silicon oxide interface
HAXPES study of CeOx thin film - silicon oxide interface
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CeOx薄膜-氧化硅界面的HAXPES研究
DOI：
10.1016/j.apsusc.2014.02.048
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发表时间：
2014
影响因子：
6.7
通讯作者：
and Matolin V
中科院分区：
文献类型：
--
作者：
Vorokhta M;Matolinova I;Dubau M;Haviar S;Khalakhan I;Sevcikova K;Mori T;Yoshikawa H;and Matolin V
研究氧化铈薄膜沉积在硅和氧化硅是重要的，由于许多可能的应用，氧化铈为基础的微系统在电子学和催化。射频磁控溅射在技术上是制备这种系统的最合适的方法。Ce原子与衬底的相互作用及其被含氧射频等离子体氧化强烈影响薄膜生长机制。我们表明，使用硬X射线光电子能谱与高信息深度，铈是通过在3+状态下与Ce的界面处形成复杂的硅酸盐相来还原氧化硅。因此，非常薄的氧化铈薄膜的组成受到薄膜-基底相互作用的强烈影响。通过中间薄碳膜对氧化硅基底的涂覆提供了用于电催化应用的导电基底，并且基本上降低了氧化硅基底-氧化铈相互作用。
Investigation of cerium oxide thin film deposition on silicon and silicon oxide is important due to many possible applications of cerium oxide based micro-systems in electronics and catalysis. rf-Magnetron sputtering is technologically the most suitable method of preparation of such systems. Mechanism of film growth is strongly influenced by interaction of Ce atoms with the substrate and their oxidation by oxygen containing rf plasma. We show using hard X-ray photoelectron spectroscopy with high information depth that cerium is reducing silicon oxide by forming complex silicate phase at the interface with Ce in the 3+ state. For this reason composition of very thin films of cerium oxide is strongly influenced by thin film–substrate interaction. A coating of the silicon oxide substrate by an intermediate thin carbon film provides conductive substrate for electrocatalytic applications and decreases the silicon oxide substrates–cerium oxide interaction essentially.