Rapid Thermal Annealing of p-Type Polysilicon Passivated Contacts Silicon Solar Cells
Rapid Thermal Annealing of p-Type Polysilicon Passivated Contacts Silicon Solar Cells
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DOI：
10.1109/jphotov.2023.3241790
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发表时间：
2023-05
影响因子：
3
通讯作者：
Arpan Sinha;S. Dasgupta;A. Rohatgi;M. Gupta
中科院分区：
文献类型：
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作者：
Arpan Sinha;S. Dasgupta;A. Rohatgi;M. Gupta
基于隧道氧化物钝化接触（TOPCon）的载流子选择性接触硅太阳电池效率已超过25%，并计划大规模生产。TOPCon太阳能电池制造的关键步骤之一是在875 °C左右进行炉内退火。我们研究了TOPCon太阳电池的快速热退火（RTA）。我们发现在空气中进行的RTA显示出比在N2气氛中少得多的氢诱导的气泡。第二，RTA中产生的光辐射和热对iVoc的降解有显著影响。在多晶硅顶部具有SiNx：H层的RTA产生706 mV的iVoc。通过各种表征，如表面形态，表面钝化，结晶度测定，化学成分变化，薄层电阻，和氧化态的氧化物空气RTA后的TOPCon性能优于氮气中，最佳温度为825 °C。生成气体退火进一步改善了iVoc。晶化和方块电阻取决于退火温度和时间。
The carrier selective contacts Si solar cells based on tunnel oxide passivated contact (TOPCon) have provided an efficiency of over 25%, and the large-scale production is planned. One of the crucial steps in TOPCon solar cells fabrication is furnace annealing at around 875 °C. We have investigated the rapid thermal annealing (RTA) for TOPCon solar cells. We discovered that the RTA carried out in air showed much fewer hydrogen-induced blisters than in the N2 atmosphere. Second, the optical radiation and heat generated in RTA had a significant effect on the degradation of iVoc. The RTA with a SiNx:H layer on top of polysilicon generated iVoc of 706 mV. The mechanism of degradation under air versus nitrogen atmosphere and the effect of high-intensity light during the annealing process were inferred through various characterizations, such as surface morphology, surface passivation, crystallinity determination, chemical compositional changes, electrical sheet resistances, and oxidation state of ultrathin SiOx. The TOPCon after air RTA performed better than in nitrogen, optimally at 825 °C. Forming gas annealing further improved the iVoc. Crystallization and sheet resistance were dependent on the annealing temperature and time.