Cryogenic Characterization of Nano-scale Bulk FinFETs
Cryogenic Characterization of Nano-scale Bulk FinFETs
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纳米级块状 FinFET 的低温表征
DOI：
10.1109/icsict49897.2020.9278248
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Zhangang Zhang
中科院分区：
文献类型：
--
作者：
Linjie Fan;J. Bi;Xue Fan;Gaobo Xu;Yannan Xu;K. Xi;Zhangang Zhang
对于最先进的量子技术应用，大量量子位的有效控制和高速读取需要在低温环境下结合互补金属氧化物半导体（CMOS）电路。在这封信中，研究了可应用于量子控制器的体鳍式场效应晶体管 (FinFET) 器件在低温条件下的电响应。接受测试的器件是沟道长度为 35 nm 的高 k 金属栅体 FinFET。 FinFET 器件的电性能在低温下得到极大优化。随着温度降低，FinFET 表现出更大的饱和电流、更小的亚阈值摆幅、更大的最大跨导以及更小的栅极感应漏极漏电流。这些结果为在低温环境下的量子芯片控制系统中实施 FinFET 提供了实验证据。
For the state-of-art quantum technology applications, the effective control and high-speed reading of a large number of qubits require a combination of complementary metal-oxide-semiconductor (CMOS) circuits in cryogenic temperatures environments. In this letter, the electrical responses of bulk fin field effect transistor (FinFET) devices that could be applied in quantum controllers have been investigated under cryogenic conditions. The devices under test are high-k metal gate bulk FinFETs with 35 nm channel length. The electrical properties of the FinFET device are greatly optimized at cryogenic temperatures. As the temperature decreases, the FinFET exhibits a larger saturation current, smaller subthreshold swing, larger maximum transconductance, and smaller gate-induced drain leakage current. These results provide experimental evidence for the implementation of the FinFET in control systems for quantum chips in cryogenic environments.