Low-loss GHz frequency phononic integrated circuits in Gallium Nitride for compact radio-frequency acoustic wave devices.
Low-loss GHz frequency phononic integrated circuits in Gallium Nitride for compact radio-frequency acoustic wave devices.
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用于紧凑型射频声波器件的低损耗 GHz 频率氮化镓声子集成电路。
DOI：
10.1109/tuffc.2023.3332146
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Bicer M
中科院分区：
文献类型：
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作者：
Bicer M
在尺度波导和谐振器中引导和操纵GHz频率的声波，为在芯片尺度平台中操纵射频（RF）信号开辟了新的自由度。实现高性能器件的一个关键要求是在这些高度受限的几何形状中证明低声耗散。在这项工作中，我们通过展示3.4 GHz频率质量因子（）产品接近hz的声学微环谐振器，证明了碳化硅（SiC）上的氮化镓（GaN）支持低损耗声学。测量到的低耗散超过了GaN的简化各向同性Akhiezer材料阻尼极限所设定的界限。我们使用这种低损耗声学平台来演示螺旋延迟线，其片上RF延迟超过相当于m的等效电磁延迟。鉴于氮化镓是一种成熟的具有高电子迁移率的半导体，这项工作开辟了工程行波声电相互作用在尺度波导几何形状中的前景，并对芯片级射频信号处理具有相关意义。
Guiding and manipulating GHz frequency acoustic waves in-scale waveguides and resonators open up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling high-performance devices is the demonstration of low acoustic dissipation in these highly confined geometries. In this work, we show that gallium nitride (GaN) on silicon carbide (SiC) supports low-loss acoustics by demonstrating acoustic microring resonators with frequency-quality factor () products approachingHz at 3.4 GHz. The low dissipation measured exceeds thebound set by the simplified isotropic Akhiezer material damping limit of GaN. We use this low-loss acoustics platform to demonstrate spiral delay lines with on-chip RF delays exceeding, corresponding to an equivalent electromagnetic delay ofm. Given GaN is a well-established semiconductor with high electron mobility, this work opens up the prospect of engineering traveling wave acoustoelectric interactions in-scale waveguide geometries, with associated implications for chip-scale RF signal processing.