Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation.
Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation.
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DOI：
10.1103/physrevlett.110.245502
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发表时间：
2013-06
影响因子：
8.6
通讯作者：
M. Ridgway;T. Bierschenk;R. Giulian;B. Afra;M. Rodríguez;L. Araujo;A. Byrne;N. Kirby;O. Pakarinen;F. Djurabekova;K. Nordlund;M. Schleberger;Omair Osmani;N. Medvedev;B. Rethfeld;P. Kluth
中科院分区：
文献类型：
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作者：
M. Ridgway;T. Bierschenk;R. Giulian;B. Afra;M. Rodríguez;L. Araujo;A. Byrne;N. Kirby;O. Pakarinen;F. Djurabekova;K. Nordlund;M. Schleberger;Omair Osmani;N. Medvedev;B. Rethfeld;P. Kluth
快速重离子辐照在非晶态Ge中形成的离子径迹已经通过实验和模拟得到了非晶态半导体中的离子径迹的明确证据。它们的核心密度不足和外壳密度过高是由淬火的径向向外物质流动造成的。在固-液相转变之后，容纳高密度熔融相所需的体积收缩会沿着离子方向产生空洞，这可能是孔隙率的先兆。他们的领结形状，通过模拟重现，是径向向内再结晶的结果。
Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-to-liquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification.