Structural and gas-sensing properties of V2O5–MoO3 thin films for H2 detection
Structural and gas-sensing properties of V2O5–MoO3 thin films for H2 detection
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DOI：
10.1016/s0925-4005(01)00732-8
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发表时间：
2001-06
影响因子：
8.4
通讯作者：
C. Imawan;H. Steffes;F. Solzbacher;E. Obermeier
中科院分区：
文献类型：
--
作者：
C. Imawan;H. Steffes;F. Solzbacher;E. Obermeier
研究了V2 O 5覆盖层修饰MoO 3薄膜的结构和气敏特性。采用磁控射频溅射法制备薄膜。V2 O 5-MoO 3薄膜的晶粒尺寸明显小于纯MoO 3薄膜。薄膜的电阻率可以大大降低。结果表明，V_2O_5覆盖层的加入可以显著提高射频溅射MoO_3薄膜的氢敏性能。溅射的V-覆盖层的厚度强烈地影响传感器的灵敏度。当考虑响应时间、恢复时间和灵敏度时，发现最佳工作温度为150°C。对NO_2、NH_3、CO、CH_4和SO_2等气体的交叉灵敏度很低。50%响应时间（τ50）约为20 s，恢复时间约为1 min。这些结果表明，V2 O 5-MoO 3薄膜是一种优良的材料，低温，高灵敏度和选择性的H2传感器。
Structural and gas-sensing properties of the modified MoO3thin films using a V2O5-overlayer have been investigated. The thin films were deposited by magnetron rf sputtering. The crystallite size of the V2O5–MoO3thin films is significantly smaller than the pure MoO3thin films. The electrical resistivity of the films could be drastically reduced. It is found that the H2-sensing properties of the rf sputtered MoO3thin films can be improved markedly by addition of a V2O5-overlayer. The sensitivity of the sensor is strongly influenced by the thickness of the sputtered V-overlayers. The optimum operating temperature when considering the response time, recovery time and the sensitivity was found at 150°C. Very low cross-sensitivity could be observed towards NO2, NH3, CO, CH4and SO2gases. The 50% response (τ50) and the recovery time are about 20s and 1min, respectively. These results suggest V2O5–MoO3thin films to be an excellent material for a low temperature, highly sensitive and selective H2sensor.