Degradation of GaN-based quantum well light-emitting diodes
Degradation of GaN-based quantum well light-emitting diodes
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DOI：
10.1063/1.2829781
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发表时间：
2008-01
影响因子：
3.2
通讯作者：
Lixia Zhao;E. Thrush;C. Humphreys;W. A. Phillips
中科院分区：
文献类型：
--
作者：
Lixia Zhao;E. Thrush;C. Humphreys;W. A. Phillips
研究了AlGaN/InGaN多量子阱近紫外发光二极管在高结温下的电学和光学特性。光输出在前30 h内呈指数下降40%，之后没有明显变化。电流-电压特性在退化之前几乎是理想的，理想因子约为2。在降解过程中，在低于2.5V的电压下，对电流的额外贡献变得明显，电流-电压特性具有与温度无关的对数斜率，这表明通过隧穿降解过程中产生的缺陷的额外传输机制。额外的电流分量的演变对应于两个不同的阶段中观察到的光发射随应力时间的减少。缺陷的产生对正向和反向偏置电流有相似的影响，这可能与前30小时的快速退化有关，但对于第二个半导体器件，这可能是由于半导体器件的缺陷引起的。
Electrical and optical properties of AlGaN∕InGaN-based near-ultraviolet (UV) multiquantum well light-emitting diodes have been studied during operation at high junction temperatures. Light output decreased exponentially by 40% in the first 30h after which there was no obvious change. The current-voltage characteristics were almost ideal before degradation, with an ideality factor of approximately 2. During degradation, an additional contribution to the current becomes apparent at voltages of below 2.5V, with a temperature-independent logarithmic slope of the current-voltage characteristic, suggesting an additional transport mechanism by tunneling through defects created during degradation. The evolution of the additional current component corresponded to the two different stages observed in the reduction of the light emission with stress time. Generation of defects with similar effects on forward and reverse bias currents could be correlated with the rapid degradation during the first 30h, but for the sec...